Process Temperature Dependence of Al2O3Film Deposited by Thermal ALD as a Passivation Layer for c-Si Solar Cells-Reference-Cited by-同舟云学术

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Process Temperature Dependence of Al2O3Film Deposited by Thermal ALD as a Passivation Layer for c-Si Solar Cells

Published:2013-12-31 Issue:6 Volume:13 Page:581-588
ISSN:1598-1657
Container-title:JSTS:Journal of Semiconductor Technology and Science
language:en
Short-container-title:JSTS:Journal of Semiconductor Technology and Science

Author:

Oh Sung-Kwen,Shin Hong-Sik,Jeong Kwang-Seok,Li Meng,Lee Horyeong,Han Kyumin,Lee Yongwoo,Lee Ga-Won,Lee Hi-Deok

Publisher

The Institute of Electronics Engineers of Korea

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://ocean.kisti.re.kr/downfile/crosscheck/ieek/JAKO201301671904487.pdf

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Passivation and Electrical Properties of Alumina Layers Deposited by Atomic‐Layer Deposition with Different Precursors;physica status solidi (a);2022-05-29

2. Influence of growth temperature on dielectric strength of Al2O3 thin films prepared via atomic layer deposition at low temperature;Scientific Reports;2022-03-24

3. Optimization of ALD $$\hbox {Al}_{2}\hbox {O}_{3}$$ process parameters for passivation of c-silicon and its implementation on industrial monocrystalline silicon solar cell;Applied Physics B;2019-06

4. Hydrogen-related defects in Al 2 O 3 layers grown on n -type Si by the atomic layer deposition technique;Physica B: Condensed Matter;2018-04

5. Atmospheric deposition process for enhanced hybrid organic–inorganic multilayer barrier thin films for surface protection;Applied Surface Science;2017-11

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