Hydrogen‐Related Defects in Insulators-Reference-Cited by-同舟云学术

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Hydrogen‐Related Defects in Insulators

Published:2021-07-08 Issue:23 Volume:218 Page:2100213
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Kolkovsky Vladimir¹^ORCID

Affiliation:

1. Fraunhofer IPMS, EMT Maria-Reiche Str. 2 01109 Dresden Germany

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.202100213

Reference19 articles.

1. n-type doping of oxides by hydrogen

2. Behaviour of hydrogen in wide band gap oxides

3. Universal alignment of hydrogen levels in semiconductors, insulators and solutions

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Alumina layers deposited by atomic layer deposition with different precursors: Surface photovoltage measurements;Microelectronics Reliability;2023-11

2. Passivation and Electrical Properties of Alumina Layers Deposited by Atomic‐Layer Deposition with Different Precursors;physica status solidi (a);2022-05-29

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