Transient self-heating effects in multifinger AlGaN/GaN HEMTs with metal airbridges-Reference-Cited by-同舟云学术

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Transient self-heating effects in multifinger AlGaN/GaN HEMTs with metal airbridges

Published:2007-06 Issue:6 Volume:51 Page:969-974
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Kuzmik J.,Bychikhin S.,Lossy R.,Würfl H.-J.,di Forte Poisson M.-A.,Teyssier J.-P.,Gaquière C.,Pogany D.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. Self-heating in high-power AlGaN–GaN HFET’s;Gaska;IEEE Electron Devices Letters,1998

2. Determination of channel temperature in AlGaN/GaN HEMTs grown on sapphire and silicon substrates using DC characterization method;Kuzmik;IEEE Transactions on Electron Devices,2002

3. Performance degradation of GaN field-effect transistors due to thermal boundary resistance at GaN/substrate interface;Turin;Electronics Letters,2004

4. Transient thermal characterization of AlGaN/GaN HEMTs grown on silicon;Kuzmik;IEEE Transactions on Electronic Devices,2005

5. Pulsed photothermal reflectance measurement of the thermal conductivity of sputtered aluminium nitride thin films;Zhao;Journal of Applied Physics,2004

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1. High-periphery GaN HEMT modeling up to 65 GHz and 200 °C;Solid-State Electronics;2019-02

2. Simulation of thermal management in AlGaN/GaN HEMTs with integrated diamond heat spreaders;Semiconductor Science and Technology;2013-04-09

3. Investigation on the thermal behavior of microwave GaN HEMTs;Solid-State Electronics;2011-10

4. Application of transient interferometric mapping method for ESD and latch-up analysis;Microelectronics Reliability;2011-09

5. Thermal characterization of MBE-grown GaN/AlGaN/GaN device on single crystalline diamond;Journal of Applied Physics;2011-04-15

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