Performance degradation of GaN field-effect transistors due to thermal boundary resistance at GaN∕substrate interface
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_20040071?crawler=true&mimetype=application/pdf
Reference11 articles.
1. High breakdown voltage GaN HFET with field plate
2. Gate-voltage dependence of low-frequency noise in GaN/AlGaN heterostructure field-effect transistors
3. High-temperature performance of AlGaN/GaN HFETs on SiC substrates
4. Measurement of temperature distribution in multifinger AlGaN/GaN heterostructure field-effect transistors using micro-Raman spectroscopy
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