High-periphery GaN HEMT modeling up to 65 GHz and 200 °C
Author:
Funder
Eurostars
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference53 articles.
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4. Transient self-heating effects in multifinger AlGaN/GaN HEMTs with metal airbridges;Kuzmik;Solid-State Electron,2007
5. Self-consistent electrothermal modeling of class A, AB, and B power GaN HEMTs under modulated RF excitation;Camarchia;IEEE Trans Microw Theory Techn,2007
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