Accurate Modeling of GaN HEMTs Oriented to Analysis of Kink Effects in S<sub>22</sub> and h<sub>21</sub>: An Effective Machine Learning Approach-Reference-Cited by-同舟云学术

Accurate Modeling of GaN HEMTs Oriented to Analysis of Kink Effects in S₂₂ and h₂₁: An Effective Machine Learning Approach

Published:2024 Issue: Volume:12 Page:201-210
ISSN:2168-6734
Container-title:IEEE Journal of the Electron Devices Society
language:
Short-container-title:IEEE J. Electron Devices Soc.

Author:

Zhu Zegen¹,Bosi Gianni²,Raffo Antonio²^ORCID,Crupi Giovanni³^ORCID,Cai Jialin¹^ORCID

Affiliation:

1. Key Laboratory of RF Circuit and System, Ministry of Education, College of Electronics and Information, Hangzhou Dianzi University, Hangzhou, China

2. Department of Engineering, University of Ferrara, Ferrara, Italy

3. BIOMORF Department, University of Messina, Messina, Italy

Funder

National Natural Science Foundation of China

Qianjiang Talent Project Type-D of Zhejiang

Italian Ministry of University and Research (MUR) through the PRIN 2022 Project

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/6245494/10416702/10433010.pdf?arnumber=10433010

Reference38 articles.

1. Theoretical and Numerical Design of a Wireless Power Transmission Link With GaN-Based Transmitter and Adaptive Receiver

2. A 17.3–20.2-GHz GaN-Si MMIC Balanced HPA for Very High Throughput Satellites

3. A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs

4. An accurate small-signal model for AlGaN-GaNHEMT suitable for scalable large-signal model construction

5. A novel interpretation of transistor S-parameters by poles and zeros for RF IC circuit design

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2. An Improved Nonlinear I‐V Model for GaN HEMTs;International Journal of RF and Microwave Computer-Aided Engineering;2024-01