Ultra-high aspect-ratio FinFET technology-Reference-Cited by-同舟云学术

Ultra-high aspect-ratio FinFET technology

Published:2010-09 Issue:9 Volume:54 Page:870-876
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Jovanović Vladimir,Suligoj Tomislav,Poljak Mirko,Civale Yann,Nanver Lis K.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference20 articles.

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3. Tang S, Chang L, Lindert N, Choi Y-K, Lee W-C, Huang X, Subramanian V, Bokor J, King T-J, Hu C. FinFET – A quasi-planar double-gate MOSFET. In: International solid-state circuits conference, vol. 1; 2001. p. 118–9.

4. Gate resistance modeling of multifin MOS devices;Wu;IEEE Electron Dev Lett,2006

5. Analysis of geometry-dependent parasitics in multifin double-gate FinFETs;Wu;IEEE Trans Electron Dev,2007

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