2D fin field-effect transistors integrated with epitaxial high-k gate oxide-Reference-Cited by-同舟云学术

2D fin field-effect transistors integrated with epitaxial high-k gate oxide

Published:2023-03-22 Issue:7955 Volume:616 Page:66-72
ISSN:0028-0836
Container-title:Nature
language:en
Short-container-title:Nature

Author:

Tan Congwei,Yu Mengshi,Tang Junchuan,Gao Xiaoyin,Yin Yuling,Zhang Yichi,Wang Jingyue^ORCID,Gao Xinyu,Zhang Congcong,Zhou Xuehan,Zheng Liming,Liu Hongtao,Jiang Kaili^ORCID,Ding Feng^ORCID,Peng Hailin^ORCID

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

https://www.nature.com/articles/s41586-023-05797-z.pdf

Reference57 articles.

1. Liu, Y. et al. Promises and prospects of two-dimensional transistors. Nature 591, 43–53 (2021).

2. Wang, S., Liu, X. & Zhou, P. The road for 2D semiconductors in the silicon age. Adv. Mater. 34, 2106886 (2022).

3. International Roadmap for Devices and Systems 2017 Edition https://irds.ieee.org/ (IEEE, 2017).

4. Shen, Y. et al. The trend of 2D transistors toward integrated circuits: scaling down and new mechanisms. Adv. Mater. 34, 2201916 (2022).

5. Huang, X., Liu, C. & Zhou, P. 2D semiconductors for specific electronic applications: from device to system. npj 2D Mater. Appl. 6, 51 (2022).

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