2D fin field-effect transistors integrated with epitaxial high-k gate oxide
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
https://www.nature.com/articles/s41586-023-05797-z.pdf
Reference57 articles.
1. Liu, Y. et al. Promises and prospects of two-dimensional transistors. Nature 591, 43–53 (2021).
2. Wang, S., Liu, X. & Zhou, P. The road for 2D semiconductors in the silicon age. Adv. Mater. 34, 2106886 (2022).
3. International Roadmap for Devices and Systems 2017 Edition https://irds.ieee.org/ (IEEE, 2017).
4. Shen, Y. et al. The trend of 2D transistors toward integrated circuits: scaling down and new mechanisms. Adv. Mater. 34, 2201916 (2022).
5. Huang, X., Liu, C. & Zhou, P. 2D semiconductors for specific electronic applications: from device to system. npj 2D Mater. Appl. 6, 51 (2022).
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