An efficient technique to predict DC characteristics of nano-FinFETs using a deep neural network
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Modeling and Simulation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s10825-022-01978-7.pdf
Reference35 articles.
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3. Liaw, Y.-G., Liao, W.-S., Wang, M.-C., Lin, C.-L., Zhou, B., Gu, H., Li, D., Zou, X.: A high aspect ratio silicon-fin FinFET fabricated upon SOI wafer. Solid-State Electron. 126, 46–50 (2016)
4. Yesayan, A., Prégaldiny, F., Chevillon, N., Lallement, C., Sallese, J.-M.: Physics-based compact model for ultra-scaled FinFETs. Solid-State Electron. 62(1), 165–173 (2011)
5. Khandelwal, S., Duarte, J.P., Medury, A., Chauhan, Y., Hu, C.: New industry standard FinFET compact model for future technology nodes. In: 2015 Symposium on VLSI Technology (VLSI Technology). IEEE, pp. T62–T63 (2015)
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