Author:
Yesayan Ashkhen,Prégaldiny Fabien,Chevillon Nicolas,Lallement Christophe,Sallese Jean-Michel
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference34 articles.
1. Tech. rep., International technology roadmap for semiconductor (ITRS). 2009. .
2. Double-gate silicon-on-insulator transistor with volume inversion: a new device with greatly enhanced performance;Balestra;IEEE Electron Device Lett,1987
3. Sensitivity of double-gate and FinFET devices to process variations;Xiong;IEEE Trans Electron Dev,2003
4. Trivedi V, Fossum J, Gamiz F. A compact QM-based mobility model for nanoscale ultra-thin-body CMOS devices. In: Proceedings of the IEEE international electronic devices meeting (IEDM’04); 2004. p. 763–6.
5. Xiong W, Park J, Colinge J. Corner effect in multiple-gate SOI MOSFETs. In: Proceedings of the IEEE international SOI conference; 2003. p. 111–3.
Cited by
29 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献