Physics-based compact model for ultra-scaled FinFETs

Author:

Yesayan Ashkhen,Prégaldiny Fabien,Chevillon Nicolas,Lallement Christophe,Sallese Jean-Michel

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference34 articles.

1. Tech. rep., International technology roadmap for semiconductor (ITRS). 2009. .

2. Double-gate silicon-on-insulator transistor with volume inversion: a new device with greatly enhanced performance;Balestra;IEEE Electron Device Lett,1987

3. Sensitivity of double-gate and FinFET devices to process variations;Xiong;IEEE Trans Electron Dev,2003

4. Trivedi V, Fossum J, Gamiz F. A compact QM-based mobility model for nanoscale ultra-thin-body CMOS devices. In: Proceedings of the IEEE international electronic devices meeting (IEDM’04); 2004. p. 763–6.

5. Xiong W, Park J, Colinge J. Corner effect in multiple-gate SOI MOSFETs. In: Proceedings of the IEEE international SOI conference; 2003. p. 111–3.

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