Analysis of Geometry-Dependent Parasitics in Multifin Double-Gate FinFETs

Author:

Wu Wen,Chan Mansun

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Cited by 83 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Spacer engineering on multi-channel FinFET for advanced wireless applications;AEU - International Journal of Electronics and Communications;2024-05

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4. The Analytical Models of Fringe Parasitic Capacitance of FinFET - A Review;Journal of Physics: Conference Series;2024-01-01

5. FinFETs and their Applications;Nanoscale Field Effect Transistors: Emerging Applications;2023-12-19

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