Spacer engineering on multi-channel FinFET for advanced wireless applications
Author:
Publisher
Elsevier BV
Reference29 articles.
1. Band gap and gate underlap engineered novel Si0.2Ge0.8/GaAs JLTFET with dual dielectric gate for improved wireless applications;Kumar;AEU - Int J Electron Commun,2023
2. Benchmarking of multi-bridge-channel FETs toward analog and mixed-mode circuit applications;Sreenivasulu;IEEE Access,2024
3. Performance comparison of nanosheet FET, CombFET, and TreeFET: device and circuit perspective;Kumari;IEEE Access,2024
4. Multi-channel step FinFET with spacer engineering;Das;IEEE Access,2024
5. Design of resistive load inverter and common source amplifier circuits using symmetric and asymmetric nanowire FETs;Sreenivasulu;J Electron Mater,2023
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