Schottky rectifiers fabricated on bulk GaN substrate analyzed by electron-beam induced current technique-Reference-Cited by-同舟云学术

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Schottky rectifiers fabricated on bulk GaN substrate analyzed by electron-beam induced current technique

Published:2008-05 Issue:5 Volume:52 Page:817-823
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Lu Hai,Cao Dongsheng,Xiu Xiangqian,Xie Zili,Zhang Rong,Zheng Youdou,Li Zhonghui

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference28 articles.

1. See for example, the special issue on GaN Electronics, IEEE Trans Electron Devices 2001;48:405.

2. High critical electric field of AlxGa1−xN p–i–n vertical conducting diodes on n-SiC substrates;Nishikawa;Appl Phys Lett,2006

3. Growth and characterization of GaN PiN rectifiers on free-standing GaN;Cao;Appl Phys Lett,2005

4. High performance GaN pin rectifiers grown on free-standing GaN substrates;Limb;Electronics Lett,2006

5. High breakdown voltage with low on-state resistance of p-InGaN/n-GaN vertical conducting diodes on n-GaN substrates;Nishikawa;Appl Phys Lett,2006

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1. Cross-sectional SEM-EBIC analysis of semi-vertical GaN power diodes;2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM);2022-10-23

2. Vertical Schottky Contacts to Bulk GaN Single Crystals and Current Transport Mechanisms: A Review;Journal of Electronic Materials;2021-09-30

3. Identification of Electrically Stressed Regions in AlGaN/GaN-on-Si Schottky Barrier Diode Using EBIC Technique;IEEE Transactions on Electron Devices;2021-01

4. Electron Beams Applied to Material Science;Vacuum and Surface Science;2020-01-10

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