Polarity Control in 3D GaN Structures Grown by Selective Area MOVPE-Reference-Cited by-同舟云学术

Polarity Control in 3D GaN Structures Grown by Selective Area MOVPE

Published:2012-04-12 Issue:5 Volume:12 Page:2552-2556
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Wang Xue¹,Li Shunfeng¹,Fündling Sönke¹,Wei Jiandong¹,Erenburg Milena¹,Wehmann Hergo-H.¹,Waag Andreas¹,Bergbauer Werner²,Strassburg Martin²,Jahn Uwe³,Riechert Henning³

Affiliation:

1. Institut für Halbleitertechnik, TU Braunschweig, Hans-Sommer-Straße 66, 38106 Braunschweig, Germany

2. Osram Opto Semiconductors GmbH, Leibnizstraße 4, 93055 Regensburg, Germany

3. Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/cg3001637

Reference35 articles.

1. Gallium Nitride-Based Nanowire Radial Heterostructures for Nanophotonics

2. The nanorod approach: GaN NanoLEDs for solid state lighting

3. Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes

4. Theoretical Study of Orientation Dependence of Piezoelectric Effects in Wurtzite Strained GaInN/GaN Heterostructures and Quantum Wells

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