A model of the off-behaviour of 4H–SiC power JFETs-Reference-Cited by-同舟云学术

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A model of the off-behaviour of 4H–SiC power JFETs

Published:2015-07 Issue: Volume:109 Page:17-24
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Bellone Salvatore,Di Benedetto Luigi,Licciardo Gian Domenico

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference25 articles.

1. Hard-switching stressing of vertical-channel implanted-gate SiC JFETs;Lawson;IEEE Electron Dev Lett – EDL,2012

2. Sheridan DC, Ritenour A, Bondarenko V, Burks P, Casady JB. Record 2.8 mΩ-cm2 1.9 kV enhancement-mode SiC VJFETs. In: Int symp on power semicond dev and ICs (ISPSD 2009); 2009. p. 335–8.

3. Tanaka Y, Yano K, Okamot M, Takatsuka A, Arai K, Yatsuo T. Buried gate static induction transistors in 4H–SiC (SiC-BGSITs) with ultra low on-resistance. In: Proc int symp power semicond dev & ICs (ISPSD 2007); 2007. p. 93–6.

4. A comparative study of gate structures for 9.4-kV 4H–SiC normally on vertical JFETs;Sung;IEEE Trans Electron Dev – TED,2012

5. Field-effect transistor versus analog transistor (Static Induction Transistor);Nishizawa;IEEE Trans Electron Dev – TED,1975

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3. A 4H-SiC UV Phototransistor With Excellent Optical Gain Based on Controlled Potential Barrier;IEEE Transactions on Electron Devices;2020-01

4. Analysis of the Potential Barrier on the Behaviour of 4H-SiC JBS Temperature Sensors;Lecture Notes in Electrical Engineering;2020

5. First Experimental Test on Bipolar Mode Field Effect Transistor Prototype in 4H-SiC: A Proof of Concept;Materials Science Forum;2019-07

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