Buried Gate Static Induction Transistors in 4H-SiC (SiC-BGSITs) with Ultra Low On-Resistance-Reference-Cited by-同舟云学术

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Buried Gate Static Induction Transistors in 4H-SiC (SiC-BGSITs) with Ultra Low On-Resistance

Published:2007-05 Issue: Volume: Page:
ISSN:
Container-title:Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's
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Author:

Tanaka Yasunori,Yano Koji,Okamoto Mitsuo,Takatsuka Akio,Arai Kazuo,Yatsuo Tsutomu

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4294904/4294905/04294940.pdf?arnumber=4294940

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A model of the off-behaviour of 4H–SiC power JFETs;Solid-State Electronics;2015-07

2. An investigation of SiC-SIT DC circuit breakers for higher voltage direct current distribution systems;2010 IEEE Energy Conversion Congress and Exposition;2010-09

3. Short-Circuit Capability of SiC Buried-Gate Static Induction Transistors: Basic Mechanism and Impacts of Channel Width on Short-Circuit Performance;IEEE Transactions on Electron Devices;2010-04

4. Design and modeling of a novel 4H-SiC normally-off BMFET transistor for power applications;Melecon 2010 - 2010 15th IEEE Mediterranean Electrotechnical Conference;2010

5. Design, process, and performance of all-epitaxial normally-off SiC JFETs;physica status solidi (a);2009-06-25

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