Author:
Malhan Rajesh K.,Bakowski Mietek,Takeuchi Yuuichi,Sugiyama Naohiro,Schöner Adolf
Subject
Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference36 articles.
1. C. M. Johnson C. Buttay S. J. Rashid F. Udrea G. A. J. Amaratunga P. Ireland R. K. Malhan in: Proceedings 19th International Symposium on Power Semiconductor Devices & ICs, Jeju, Korea, May 2007, pp. 53-56.
2. S. Krishnaswami in: Proceedings Intl. Reliability Physics Symposium, San Jose, CA, USA, April 2005.
3. A New High Current Gain 4H-SiC Bipolar Junction Transistor with Suppressed Surface Recombination Structure: SSR-BJT
4. 1000-V, 30-A 4H-SiC BJTs with high current gain
5. Impact of SiC Structural Defects on the Degradation Phenomenon of Bipolar SiC Devices
Cited by
31 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献