Wide-Bandgap Semiconductor Device Technologies for High-Temperature and Harsh Environment Applications-Reference-Cited by-同舟云学术

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Wide-Bandgap Semiconductor Device Technologies for High-Temperature and Harsh Environment Applications

Published:2019-03-29 Issue: Volume: Page:1-29
ISSN:
Container-title:Harsh Environment Electronics
language:
Short-container-title:

Author:

Rafiqul Islam Md.¹,Galib Roisul H.²,Sarkar Montajar¹,Chowdhury Shaestagir³

Affiliation:

1. Bangladesh University of Engineering and Technology (BUET); Department of Materials and Metallurgical Engineering; Old Academic Building, Zahir Raihan Road Dhaka 1000 Bangladesh

2. University of California San Diego; Department of Mechanical and Aerospace Engineering; La Jolla CA 92093 USA

3. Portland State University; Department of Mechanical and Materials Engineering; OR 97291 USA

Publisher

Wiley-VCH Verlag GmbH & Co. KGaA

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/9783527813964.ch1/fullpdf

Reference57 articles.

1. Process Technology for Silicon Carbide Devices

2. Solar-blind photodetectors for harsh electronics;Tsai;Scientific Reports,2013

3. Extreme temperature 6H-SiC JFET integrated circuit technology;Neudeck;Physica Status Solidi (a),2009

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Face-centered cubic carbon as a fourth basic carbon allotrope with properties of intrinsic semiconductors and ultra-wide bandgap;Communications Materials;2024-07-02

2. Applications of Si~3C-SiC Heterostructures in High-Frequency Electronics up to the Terahertz Spectrum;Lecture Notes in Electrical Engineering;2021-09-22

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