Extreme temperature 6H-SiC JFET integrated circuit technology-Reference-Cited by-同舟云学术

Extreme temperature 6H-SiC JFET integrated circuit technology

Published:2009-06-25 Issue:10 Volume:206 Page:2329-2345
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:phys. stat. sol. (a)

Author:

Neudeck Philip G.,Garverick Steven L.,Spry David J.,Chen Liang-Yu,Beheim Glenn M.,Krasowski Michael J.,Mehregany Mehran

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.200925188/fullpdf

Reference59 articles.

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4. S. P. Rountree S. Berjaoui A. Tamporello B. Vincent T. Wiley in: Proc. 5th International High Temperature Electronics Conference, Albuquerque, NM, 2000 (Sandia National Laboratories, Albuquerque, NM, 2000), p. I.P2.1.

5. Honeywell Solid State Electronics Center, http://www.ssec.honeywell.com

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