Gibbs–Thomson effect on aluminum doping during trench-filling epitaxial growth of 4H-SiC-Reference-Cited by-同舟云学术

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Gibbs–Thomson effect on aluminum doping during trench-filling epitaxial growth of 4H-SiC

Published:2019-04-10 Issue:5 Volume:58 Page:051009
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Mochizuki Kazuhiro,Ji Shiyang,Adachi Kohei,Kosugi Ryoji,Yonezawa Yoshiyuki,Okumura Hajime

Funder

Council for Science, Technology and Innovation (CSTI), Cross-ministerial Strategic Innovation Promotion Program

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://iopscience.iop.org/article/10.7567/1347-4065/ab0342/pdf

Reference31 articles.

1. Fundamentals of Silicon Carbide Technology

2. Gallium Nitride and Silicon Carbide Power Devices

3. Embedded epitaxial growth of 4H-SiC on trenched substrates and pn junction characteristics

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Aluminum channeling in 4H-SiC by high-energy implantation above 10 MeV;Materials Science in Semiconductor Processing;2024-08

2. The effects of defects on the defect formation energy, electronic band structure, and electron mobility in 4H–SiC;AIP Advances;2022-06-01

3. Estimation of surface-diffusion length of aluminum-containing species on 4H-SiC (0001);Japanese Journal of Applied Physics;2020-07-28

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