A review of special gate coupling effects in long-channel SOI MOSFETs with lightly doped ultra-thin bodies and their compact analytical modeling-Reference-Cited by-同舟云学术

A review of special gate coupling effects in long-channel SOI MOSFETs with lightly doped ultra-thin bodies and their compact analytical modeling

Published:2016-03 Issue: Volume:117 Page:66-76
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Rudenko T.,Nazarov A.,Kilchytska V.,Flandre D.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference33 articles.

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3. Highly suppressed short-channel effects in ultrathin SOI n-MOSFETs;Suzuki;IEEE Trans Electron Dev,2000

4. Device design considerations for double-gate, ground-plane, and single-gated ultra-thin SOI MOSFET’s at the 25nm channel length generation;Wong;IEDM Tech Dig,1998

5. Silicon-on-Insulator Technology: Materials to VLSI;Colinge,2004

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