Comprehensive Design-oriented FDSOI EKV Model
Author:
Affiliation:
1. Institute of Electrical and Micro Engineering,École Poly technique Fédérale de Lausanne (EPFL),Lausanne,Switzerland
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9837956/9837957/09838014.pdf?arnumber=9838014
Reference15 articles.
1. Charge-Based MOS Transistor Modeling
2. On the Log-Linear Inversion-Charge Relation for MOSFET Modeling
3. Nanoscale MOSFET Modeling: Part 2: Using the Inversion Coefficient as the Primary Design Parameter
4. Effect of gate impurity concentration on inversion-layer mobility in MOSFETs with ultrathin gate oxide layer
5. Monte Carlo simulation of remote-Coulomb-scattering-limited mobility in metal–oxide–semiconductor transistors
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1. Design of Cryo-CMOS Analog Circuits using the $G_{m}/I_{D}$ Approach;2023 IEEE International Symposium on Circuits and Systems (ISCAS);2023-05-21
2. Design of Low-power Analog Circuits in Advanced Technology Nodes using the $G_{m}/I_{D}$ Approach;2023 IEEE International Symposium on Circuits and Systems (ISCAS);2023-05-21
3. An improved subthreshold swing expression accounting for back-gate bias in FDSOI FETs;Solid-State Electronics;2023-04
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