Nanoscale MOSFET Modeling: Part 2: Using the Inversion Coefficient as the Primary Design Parameter-Reference-Cited by-同舟云学术

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Nanoscale MOSFET Modeling: Part 2: Using the Inversion Coefficient as the Primary Design Parameter

Published:2017 Issue:4 Volume:9 Page:73-81
ISSN:1943-0582
Container-title:IEEE Solid-State Circuits Magazine
language:
Short-container-title:IEEE Solid-State Circuits Mag.

Author:

Enz Christian,Chicco Francesco,Pezzotta Alessandro

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/4563670/8110862/08110872.pdf?arnumber=8110872

Cited by 34 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Comprehensive Output Conductance Model Valid in All Regions of Inversion;2024 IEEE International Symposium on Circuits and Systems (ISCAS);2024-05-19

2. A gm/ID-Based Low-Power LNA for Ka-Band Applications;Sensors;2024-04-21

3. A Sub-1-V Nanopower MOS-Only Voltage Reference;Journal of Low Power Electronics and Applications;2024-02-29

4. Analytical Modeling of Short-Channel MOSFET Differential Pair Non-Linearity;IEEE Transactions on Circuits and Systems I: Regular Papers;2024

5. Design-Oriented Single-Piece 5-DC-Parameter MOSFET Model;IEEE Access;2024

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