Resistive Feedback LNA design using a 7-parameter design-oriented model for advanced technologies-Reference-Cited by-同舟云学术

Resistive Feedback LNA design using a 7-parameter design-oriented model for advanced technologies

Published:2023-05-21 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE International Symposium on Circuits and Systems (ISCAS)
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Author:

Bouchoucha Mohamed Khalil¹,Pino-Monroy Dayana A.¹,Scheer Patrick¹,Cathelin Philippe¹,Fournier Jean-Michel²,Barragan Manuel J.²,Cathelin Andreia¹,Bourdel Sylvain²

Affiliation:

1. STMicroelectronics,Crolles,France,38920

2. Université Grenoble Alpes,TIMA Laboratory, Grenoble INP,Grenoble,France,38000

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10181241/10181318/10181341.pdf?arnumber=10181341

Reference10 articles.

1. Nanoscale MOSFET Modeling: Part 2: Using the Inversion Coefficient as the Primary Design Parameter

2. A g_m/I_D Design Methodology for 28 nm FD-SOI CMOS Resistive Feedback LNAs

3. CMOS Analog Design Using All-Region MOSFET Modeling

4. Design Methodology Based on the Inversion Coefficient and its Application to Inductorless LNA Implementations

5. A Simple Figure of Merit of RF MOSFET for Low-Noise Amplifier Design

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