Design Methodology for Wideband Low Noise Amplifier for RF-front end-Reference-Cited by-同舟云学术

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Design Methodology for Wideband Low Noise Amplifier for RF-front end

Published:2024-05-03 Issue: Volume: Page:1-4
ISSN:
Container-title:2024 3rd International Conference on Artificial Intelligence For Internet of Things (AIIoT)
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Author:

Mecheri Sahana¹,Isola Sai Anurag¹,Lakshmi N S²,Kumar S Satheesh³,Rajeev Pankaj N³

Affiliation:

1. Vellore Institute of Technology,Department of Communication Engineering,Vellore,India

2. Indian Institute of Information Technology,Department of ECE,Kottayam,India

3. Vellore Institute of Technology,Department of Micro and Nano Electronics,Vellore,India

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx8/10574534/10574536/10574684.pdf?arnumber=10574684

Reference12 articles.

1. A Novel Design and Optimization Approach for Low Noise Amplifiers (LNA) Based on MOST Scattering Parameters and the gm/ID Ratio

2. A g_m/I_D Design Methodology for 28 nm FD-SOI CMOS Resistive Feedback LNAs

3. A Sub-mW, Ultra-Low-Voltage, Wideband Low-Noise Amplifier Design Technique

4. Resistive Feedback LNA design using a 7-parameter design-oriented model for advanced technologies

5. Reconfigurable Inductorless Wideband CMOS LNA for Wireless Communications

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