On the Log-Linear Inversion-Charge Relation for MOSFET Modeling

Author:

Taur YuanORCID

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Analytical Modeling of Short-Channel MOSFET Differential Pair Non-Linearity;IEEE Transactions on Circuits and Systems I: Regular Papers;2024

2. Design of Cryo-CMOS Analog Circuits using the $G_{m}/I_{D}$ Approach;2023 IEEE International Symposium on Circuits and Systems (ISCAS);2023-05-21

3. An improved subthreshold swing expression accounting for back-gate bias in FDSOI FETs;Solid-State Electronics;2023-04

4. Comprehensive Design-oriented FDSOI EKV Model;2022 29th International Conference on Mixed Design of Integrated Circuits and System (MIXDES);2022-06-23

5. SEKV-E: Parameter Extractor of Simplified EKV I-V Model for Low-Power Analog Circuits;IEEE Open Journal of Circuits and Systems;2022

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