An improved subthreshold swing expression accounting for back-gate bias in FDSOI FETs

Author:

Han Hung-ChiORCID,Jazaeri Farzan,Zhao Zhixing,Lehmann SteffenORCID,Enz Christian

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference24 articles.

1. Nanoscale MOSFET Modeling: Part 1: The Simplified EKV Model for the Design of Low-Power Analog Circuits;Enz;IEEE Solid-State Circ Mag,2017

2. Mangla A, Enz CC, Sallese J-M. Figure-of-merit for optimizing the current-efficiency of low-power RF circuits. In: Proceedings of the 18th international conference mixed design of integrated circuits and systems. 2011, p. 85–9.

3. Comprehensive Design-oriented FDSOI EKV Model;Han,2022

4. On the Log-Linear Inversion-Charge Relation for MOSFET Modeling;Taur;IEEE Trans Electron Devices,2022

5. Subthreshold Performance of Dual-Material Gate CMOS Devices and Circuits for Ultralow Power Analog/Mixed-Signal Applications;Chakraborty;IEEE Trans Electron Devices,2008

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