Monte Carlo simulation of remote-Coulomb-scattering-limited mobility in metal–oxide–semiconductor transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1572967
Reference10 articles.
1. Estimation of the effects of remote charge scattering on electron mobility of n-MOSFETs with ultrathin gate oxides
2. Experimental Evidence of Inversion-Layer Mobility Lowering in Ultrathin Gate Oxide Metal-Oxide-Semiconductor Field-Effect-Transistors with Direct Tunneling Current
3. Improved theory for remote-charge-scattering-limited mobility in metal–oxide–semiconductor transistors
4. On the universality of inversion layer mobility in Si MOSFET's: Part I-effects of substrate impurity concentration
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