Analytical V th Modeling for Dual-Gate MOSFETs With Independent Gate Control
Author:
Affiliation:
1. HiSIM Research Center, Hiroshima University, Higashihiroshima, Japan
2. School of VLSI Technology, Indian Institute of Engineering Science and Technology at Shibpur, Howrah, India
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/9901396/09875319.pdf?arnumber=9875319
Reference32 articles.
1. Advanced Short-Channel-Effect Modeling With Applicability to Device Optimization—Potentials and Scaling
2. Compact Modeling of SOI MOSFETs With Ultrathin Silicon and BOX Layers
3. Analytical Modeling of Threshold Voltage and Interface Ideality Factor of Nanoscale Ultrathin Body and Buried Oxide SOI MOSFETs With Back Gate Control
4. Substantial advantages of fully-depleted CMOS/SIMOX devices as low-power high-performance VLSI components compared with its bulk-CMOS counterpart
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