Heat sink implementation in back-end of line for self-heating reduction in 22 nm FDSOI MOSFETs
Author:
Funder
ECSEL
Innoviris
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference16 articles.
1. Modeling thermal effects in nanodevices;Raleva;IEEE Trans Electron Devices,2008
2. Analysis of self-heating effects in ultrathin-body SOI MOSFETs by device simulation;Fiegna;IEEE Trans Electron Devices,2008
3. FinFET and UTBB for RF SOI communication systems;Raskin;Solid-State Electron,2016
4. Comparison of self-heating and its effect on analogue performance in 28 nm bulk and FDSOI;Makovejev;Solid-State Electron,2016
5. Underestimation of measured self-heating in nanowires by using gate resistance technique;Mariniello;Electron Lett,2016
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1. A capacitance model for threshold voltage computation of double-insulating fully-depleted silicon-on-diamond MOSFET;The European Physical Journal Plus;2023-12-18
2. Comparison of Heat Sinks in Back-End of Line to reduce Self-Heating in 22FDX® MOSFETs;Solid-State Electronics;2023-09
3. A Capacitance Model for Front- and Back-Gate Threshold Voltage Computation of Ultra-Thin-Body and BOX Double-Insulating Silicon-on-Diamond MOSFET;Jordan Journal of Electrical Engineering;2023
4. Experimental study of thermal coupling effects in FD-SOI MOSFET;Solid-State Electronics;2022-08
5. Fully Depleted SOI Technology for Millimeter-Wave Integrated Circuits;IEEE Journal of the Electron Devices Society;2022
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