Experimental study of thermal coupling effects in FD-SOI MOSFET

Author:

Vanbrabant Martin,Raskin Jean-Pierre,Flandre Denis,Kilchytska Valeriya

Funder

Fonds De La Recherche Scientifique - FNRS

Innoviris

European Commission

ECSEL

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. 28nm FDSOI technology platform for high-speed low-voltage digital applications;Planes,2012

2. Wide frequency band assessment of 28 nm FDSOI technology platform for analogue and RF applications;Makovejev,2014

3. Comparison of self-heating and its effect on analogue performance in 28nm bulk and FDSOI;Makovejev;Solid-State Electron,2016

4. Impact of self-heating and thermal coupling on analog circuits in SOI CMOS;Tenbroek;IEEE J Solid-State Circuits,1998

5. Cryogenic CMOS circuits and systems: challenges and opportunities in designing the electronic interface for quantum processors;Charbon;IEEE Microwave Mag,2021

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