Impact of thermal coupling effects on the digital and analog figures of merit of UTBB SOI MOSFET pairs-Reference-Cited by-同舟云学术

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Impact of thermal coupling effects on the digital and analog figures of merit of UTBB SOI MOSFET pairs

Published:2023-04 Issue: Volume:202 Page:108623
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Vanbrabant Martin,Raskin Jean-Pierre,Flandre Denis,Kilchytska Valeriya

Funder

Fonds De La Recherche Scientifique - FNRS

Innoviris

European Commission

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. N. Planes et al., ‘28nm FDSOI technology platform for high-speed low-voltage digital applications’, 2012 Symposium on VLSI Technology (VLSIT), 2012, doi: 10.1109/VLSIT.2012.6242497.

2. S. Makovejev et al., ‘Wide frequency band assessment of 28 nm FDSOI technology platform for analogue and RF applications’, in 2014 15th International Conference on Ultimate Integration on Silicon (ULIS), Apr. 2014, pp. 53–56. doi: 10.1109/ULIS.2014.6813904.

3. Comparison of self-heating and its effect on analogue performance in 28nm bulk and FDSOI;Makovejev;Solid State Electron,2016

4. B. K. Esfeh, V. Kilchytska, N. Planes, M. Haond, D. Flandre, and J.-P. Raskin, ‘Comparative study of parasitic elements on RF FoM in 28 nm FD SOI and bulk technologies’, in 2015 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), Oct. 2015, pp. 1–3. doi: 10.1109/S3S.2015.7333532.

5. UTBB thermal coupling analysis in technological node level;Costa;J Integr Circ Syst,2020

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