Underestimation of measured self‐heating in nanowires by using gate resistance technique
Author:
Affiliation:
1. Electrical Engineering DepartmentCentro Universitário da FEISão Bernardo do Campo09850Brazil
2. CEA‐LETIComissariant à l'Energie Atomique et aux Energies Alternatives38054GrenobleFrance
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2016.2570
Reference9 articles.
1. Self‐heating and gate leakage current in a guarded MOSFET;Negro V.C.;Proc. IEEE,1972
2. Scaling constraints imposed by self‐heating in submicron SOI MOSFET's;Dallman D.A.;Trans. Electron. Devices,1995
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