登录 注册 会员服务 联系我们

Physical parameters based analytical I-V model of long and short channel a-IGZO TFTs

  • Published:2022-06 Issue: Volume:192 Page:108273
  • ISSN:0038-1101
  • Container-title:Solid-State Electronics
  • language:en
  • Short-container-title:Solid-State Electronics

Author:

Sharma Ashima,Bahubalindruni Pydi Ganga,Bharti Manisha,Barquinha Pedro

Funder

European Regional Development Fund

Horizon 2020

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. On a Mott formalism for modeling oxide thin-film transistors;Applied Physics Letters;2024-07-15

2. Adaptation and comparative analysis of HSPICE level‐61 and level‐62 model for a‐IGZO thin film transistors;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2024-01-15

3. Analytical modeling of organic permeable-base transistors based on geometrical parametrization;Journal of the Korean Physical Society;2023-10-06

4. Investigation of the Direct Source to Drain Tunneling in 5 nm Nanotube Junctionless Field Effect Transistor;2023 2nd International Conference on Paradigm Shifts in Communications Embedded Systems, Machine Learning and Signal Processing (PCEMS);2023-04-05

5. A Compact Model of Amorphous InGaZnO TFTs to Predict Temperature-Dependent Characteristics;IEEE Electron Device Letters;2022-09
同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3