A Compact Model of Amorphous InGaZnO TFTs to Predict Temperature-Dependent Characteristics
Author:
Affiliation:
1. Electronics and Communication Department, National Institute of Technology Delhi, Delhi, India
2. Electrical Engineering and Computer Science Department, Indian Institute of Science Education and Research Bhopal, Bhopal, India
Funder
Power Fellowship-Science and Engineering Research Board
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/55/9866921/09841593.pdf?arnumber=9841593
Reference25 articles.
1. New Compact Modeling Solutions for Organic and Amorphous Oxide TFTs
2. Analytical Current and Capacitance Models for Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors
3. Efficient Simulation Model for Amorphous In-Ga-Zn-O Thin-Film Transistors
4. Unified Analytic Model for Current–Voltage Behavior in Amorphous Oxide Semiconductor TFTs
5. An Explicit Surface-Potential-Based Model for Amorphous IGZO Thin-Film Transistors Including Both Tail and Deep States
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2. Simultaneous Extraction of Mobility Enhancement Factor and Threshold Voltage With Parasitic Resistances in Amorphous Oxide Semiconductor Thin-Film Transistors;IEEE Transactions on Electron Devices;2023-05
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