Trap-assisted tunneling current of ultrathin InAlN/GaN HEMTs on Si (1 1 1) substrate-Reference-Cited by-同舟云学术

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Trap-assisted tunneling current of ultrathin InAlN/GaN HEMTs on Si (1 1 1) substrate

Published:2019-10 Issue: Volume:160 Page:107622
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Liang Jingxian,Lai Longkun,Zhou Zhaokun,Zhang Jing,Zhang Jie,Xu Jin,Zhang Yipeng,Liu Xinyu,Luo Weijun

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference21 articles.

1. Technology and performance of InAlN/AlN/GaN HEMTs with gate insulation and current collapse suppression using ZrO2 or HfO2;Kuzmik;IEEE Trans Electron Devices,2008

2. Vertical leakage/breakdown mechanisms in AlGaN/GaN-on-Si devices;Zhou;IEEE Electron Device Lett,2012

3. Thermal stability of 5 nm barrier in InAlN/ GaN HEMTs;Medjdoub,2007

4. Gate leakage mechanisms in AlGaN/GaN and AlInN/GaN HEMTs: comparison and modeling;Turuvekere;IEEE Trans Electron Devices,2013

5. Polarization effects on gate leakage in InAlN/AlN/GaN high-electron-mobility transistors;Ganguly;Appl Phys Lett,2012

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1. Investigation of Electrical Property and Thermal Stability in Enhancement-Mode In_xAl_1–xN/AlN/GaN MOS-HEMTs Fabricated by Using NiO_x Gate and Fluorine Treatment;IEEE Journal of the Electron Devices Society;2024

2. Temperature and field dependencies of current leakage mechanisms in IrOx contacts on InAlN/GaN heterostructures;Applied Physics Letters;2023-10-09

3. Insight Into the Leakage Current Transport Mechanism Transformation in β-Ga₂O₃ SBDs Under Forward Bias Stress;IEEE Transactions on Electron Devices;2023-06

4. Performance Improvement of sol-gel prepared cerium oxide as gate oxide on Si MOS with various volumes of the chelating agent;2023 9th International Conference on Applied System Innovation (ICASI);2023-04-21

5. 2.29-kV GaN-based double-channel Schottky barrier diodes on Si substrates with high VON uniformity;Science China Information Sciences;2023-04-04

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