2.29-kV GaN-based double-channel Schottky barrier diodes on Si substrates with high VON uniformity
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Computer Science
Link
https://link.springer.com/content/pdf/10.1007/s11432-022-3520-8.pdf
Reference7 articles.
1. Lenci S, de Jaeger B, Carbonell L, et al. Au-free Al-GaN/GaN power diode on 8-in Si substrate with gated edge termination. IEEE Electron Device Lett, 2013, 34: 1035–1037
2. Hu J, Stoffels S, Lenci S, et al. Performance optimization of au-free lateral AlGaN/GaN Schottky barrier diode with gated edge termination on 200-mm silicon substrate. IEEE Trans Electron Devices, 2016, 63: 997–1004
3. Xiao M, Zhang W, Zhang Y, et al. Novel 2000 V normally-off MOS-HEMTs using AlN/GaN superlattice channel. In: Proceedings of the 31st International Symposium on Power Semiconductor Devices and ICs, 2019. 471–474
4. Shin J H, Park J, Jang S Y, et al. Metal induced inhomogeneous Schottky barrier height in AlGaN/GaN Schottky diode. Appl Phys Lett, 2013, 102: 243505
5. Zhang W, Zhang J, Xiao M, et al. High breakdown-voltage (>2200 V) AlGaN-channel HEMTs with ohmic/Schottky hybrid drains. IEEE J Electron Devices Soc, 2018, 6: 931–935
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