Metal induced inhomogeneous Schottky barrier height in AlGaN/GaN Schottky diode
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4811756
Reference19 articles.
1. Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors
2. Contactless electroreflectance studies of Fermi level position on c-plane GaN surface grown by molecular beam epitaxy and metalorganic vapor phase epitaxy
3. Mechanism of anomalous current transport in n-type GaN Schottky contacts
4. Temperature dependence on current-voltage characteristics of Ni∕Au–Al0.45Ga0.55N Schottky photodiode
5. Electron transport at metal-semiconductor interfaces: General theory
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