Temperature dependence on current-voltage characteristics of Ni∕Au–Al0.45Ga0.55N Schottky photodiode
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2896298
Reference15 articles.
1. InGaN multi‐quantum‐well structure laser diodes grown on MgAl2O4 substrates
2. AlxGa1−xN (0⩽x⩽1) ultraviolet photodetectors grown on sapphire by metal-organic chemical-vapor deposition
3. Solar-blind AlGaN photodiodes with very low cutoff wavelength
4. Future of Al x Ga 1-x N materials and device technology for ultraviolet photodetectors
5. The role of the tunneling component in the current–voltage characteristics of metal-GaN Schottky diodes
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