Insight Into the Leakage Current Transport Mechanism Transformation in β-Ga<sub>2</sub>O<sub>3</sub> SBDs Under Forward Bias Stress-Reference-Cited by-同舟云学术

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Insight Into the Leakage Current Transport Mechanism Transformation in β-Ga₂O₃ SBDs Under Forward Bias Stress

Published:2023-06 Issue:6 Volume:70 Page:3185-3190
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Pan Ailing¹^ORCID,Wang Yingzhe¹^ORCID,Zheng Xuefeng¹^ORCID,Hong Yuehua¹^ORCID,Zhang Fang¹^ORCID,Zhang Xiangyu¹,Lv Ling¹^ORCID,Cao Yanrong²^ORCID,Ma Xiaohua¹^ORCID,Hao Yue¹^ORCID

Affiliation:

1. Key Laboratory of Wide Bandgap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an, China

2. School of Mechano-Electronic Engineering, Xidian University, Xi’an, China

Funder

National Natural Science Foundation of China

Natural Science Basic Research Plan in Shaanxi Province of China

Fundamental Research Funds for the Central Universities

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10136238/10124163.pdf?arnumber=10124163

Reference42 articles.

1. Analysis of reverse leakage mechanism in recess-free thin-barrier AlGaN/GaN Schottky barrier diode

2. Carrier transport in reverse-biased graphene/semiconductor Schottky junctions

3. Forward Current Transport Mechanism and Schottky Barrier Characteristics of a Ni/Au Contact on n-GaN

4. Investigation of temperature dependent electrical characteristics on Au/Ni/β-Ga 2 O 3 Schottky diodes

5. Majority and Minority Carrier Traps in NiO/β-Ga₂O₃ p⁺-n Heterojunction Diode

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