Plasma process-induced damage on thick (6.8 nm) and thin (3.5 nm) gate oxide: parametric shifts, hot-carrier response, and dielectric integrity degradation-Reference-Cited by-同舟云学术

Plasma process-induced damage on thick (6.8 nm) and thin (3.5 nm) gate oxide: parametric shifts, hot-carrier response, and dielectric integrity degradation

Published:2001-05 Issue:5 Volume:41 Page:751-765
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Hook Terence B.,Harmon David,Lin Chuan

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference24 articles.

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4. Tsui B, Liu S, Lin G, Hwang J, Chang H. A comprehensive study on radiation damage in plasma system. Proceedings of the first International Symposium on Plasma Process-Induced Damage, Santa Clara, CA, USA. 1996. p. 148

5. Evaluation of gate oxide transformed by ion implantation;Mameno;Nucl Instrum and Meth Phys Res B,1997

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