Plasma processing induced charging damage (PID) assessment with appropriate fWLR stress methods ensuring expected MOS reliability and lifetimes for automotive products (Invited)-Reference-Cited by-同舟云学术

Plasma processing induced charging damage (PID) assessment with appropriate fWLR stress methods ensuring expected MOS reliability and lifetimes for automotive products (Invited)

Published:2022-03 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE International Reliability Physics Symposium (IRPS)
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Author:

Martin Andreas¹

Affiliation:

1. Infineon Technologies AG,Corporate Reliability Department,Neubiberg,Germany,85579

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9764406/9764408/09764556.pdf?arnumber=9764556

Reference55 articles.

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4. EDEC 14.2 task group: TG142_3 PID, PID stress measurements, draft document available for JEDEC-members,0

5. Bond-Pad Charging Protection Design for Charging-Free Reference Transistor Test Structures

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