Plasma processing induced charging damage (PID) assessment with appropriate fWLR stress methods ensuring expected MOS reliability and lifetimes for automotive products (Invited)
Author:
Affiliation:
1. Infineon Technologies AG,Corporate Reliability Department,Neubiberg,Germany,85579
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9764406/9764408/09764556.pdf?arnumber=9764556
Reference55 articles.
1. Plasma process induced damage detection by fast wafer level reliability monitoring for automotive applications
2. Reliability of thin gate oxide under plasma charging caused by antenna topography-dependent electron shading effect
3. Application of damage measurement techniques to a study of antenna structure charging;gabriel;Proc 1997 International Symposium on Plasma- and Process-Induced Damage,0
4. EDEC 14.2 task group: TG142_3 PID, PID stress measurements, draft document available for JEDEC-members,0
5. Bond-Pad Charging Protection Design for Charging-Free Reference Transistor Test Structures
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Restrictive antenna rules limiting PID degradation for MOS transistors with connected MIM-capacitors;2023 IEEE International Integrated Reliability Workshop (IIRW);2023-10-08
2. Plasma Induced Charging Damage Causing MOS Device Reliability Lifetime Degradation Originating From Well Charging of a Technology With Deep Trench Isolation;IEEE Transactions on Device and Materials Reliability;2023-09
3. New Design Optimized and IC Area Efficient Rules for the Prevention of Plasma Processing Induced Damage on CMOS Circuit Reliability;2022 IEEE International Integrated Reliability Workshop (IIRW);2022-10-09
4. Modeling Plasma-Induced Damage During the Dry Etching of Silicon;2022 IEEE International Integrated Reliability Workshop (IIRW);2022-10-09
5. Anomaly of NBTI data for PMOS transistors degraded by plasma processing induced charging damage (PID);2022 IEEE International Integrated Reliability Workshop (IIRW);2022-10-09
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3