Plasma process induced damage detection by fast wafer level reliability monitoring for automotive applications-Reference-Cited by-同舟云学术

Plasma process induced damage detection by fast wafer level reliability monitoring for automotive applications

Published:2016-09 Issue: Volume:64 Page:189-193
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Beckmeier D.,Martin A.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. K.P. Cheung, Plasma Charging Damage“, Springer Verlag London Limited, 2001, ISBN 1–85233–144-5.

2. A Comprehensive Model for Plasma Damage Enhanced Transistor Reliability Degradation;Weng,2007

3. A Model for Channel Hot Carrier Reliability Degradation Due to Plasma Damage in MOS Devices;Rangan,1999

4. A Model for Evaluating Cumulative Oxide Damage from Multiple Plasma Processes;Noguchi,2000

5. On the Impact of the Layout of MOSFET Test-Structures on the NBTI-, PBTI- and HCS-Lifetime Due to PID;Schlünder,2012

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1. New Design Optimized and IC Area Efficient Rules for the Prevention of Plasma Processing Induced Damage on CMOS Circuit Reliability;2022 IEEE International Integrated Reliability Workshop (IIRW);2022-10-09

2. Plasma processing induced charging damage (PID) assessment with appropriate fWLR stress methods ensuring expected MOS reliability and lifetimes for automotive products (Invited);2022 IEEE International Reliability Physics Symposium (IRPS);2022-03

3. Revealing stresses for plasma induced damage detection in thick oxides;2022 IEEE International Reliability Physics Symposium (IRPS);2022-03

4. Relation of PID well to gate antenna charging effects;2021 IEEE International Integrated Reliability Workshop (IIRW);2021-10-04

5. A fast Wafer Level Reliability (fWLR) Monitoring concept as a continuous reliability indicator for wafer mass production;2020 IEEE International Electron Devices Meeting (IEDM);2020-12-12