Ramped current stress for fast and reliable wafer level reliability monitoring of thin gate oxide reliability-Reference-Cited by-同舟云学术

Ramped current stress for fast and reliable wafer level reliability monitoring of thin gate oxide reliability

Published:2003-08 Issue:8 Volume:43 Page:1215-1220
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Martin Andreas,von Hagen Jochen,Alers Glenn B.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. Martin A, O’Sullivan P, Mathewson A. Correlation of lifetimes from CVS and RVS using the 1/E-model for thermally grown oxides on polysilicon. In: Proceedings of IEEE Integrated Reliability Workshop, IRW 94, Lake Tahoe, CA, October 1994. p. 106–12

2. Roussel P, Degraeve R, Van den bosch G, Kaczer B, Groeseneken G. Accurate and robust noise-based trigger algorithm for soft breakdown detection in ultra thin oxides. In: Proceedings of 39th IEEE International Reliability Physics Symposium, IRPS 01, Orlando, FL, April/May 2001. p. 386–91

3. Alers GB, Weir BE, Frei MR, Monroe D. J-Ramp on sub-3 nm dielectrics: noise as a breakdown criterion. In: Proceedings of 37th IEEE International Reliability Physics Symposium, IRPS 99, San Diego, CA, March 1999. p. 410–3

4. Dielectric reliability measurement methods: A review;Martin;Microelectron. Reliab.,1998

5. 14.2 JEDEC Standard for Time dependent dielectric breakdown, currently under review

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