Dielectric Reliability Measurement Methods: A Review
-
Published:1998-02
Issue:1
Volume:38
Page:37-72
-
ISSN:0026-2714
-
Container-title:Microelectronics Reliability
-
language:en
-
Short-container-title:Microelectronics Reliability
Author:
Martin Andreas,O'Sullivan Paula,Mathewson Alan
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference272 articles.
1. Chatterjee, P. K., Hunter, W. R., Amerasekera, A., Aur, S., Duvvury, C., Nicollian, P. E., Ting, L. M. and Yang, P., Trends for deep submicron VLSI and their implications for reliability. IEEE International Reliability Physics Symposium (IRPS'95), 1995, pp. 1–11 2. Hu, C., Gate oxide scaling limits and projection. IEEE International Electron Devices Meeting (IEDM'96), 1996, pp. 319–322 3. Momose, H. S., Morifuji, E., Yoshitomi, T., Ohguro, T., Saito, M., Morimoto, T., Katsumata, Y. and Iwai, H., “High-frequency AC characteristics of 1.5nm gate oxide MOSFETs. IEEE International Electron Devices Meeting (IEDM'96), 1996, pp. 105–108 4. Bohr, M., Ahmed, S. S., Ahmed, S. U., Bost, M., Ghani, T., Greason, J., Hainsey, R., Jan, C., Packan, P., Sivakumar, S., Thompson, S., Tsai, J. and Yang, S., A high performance 0.25μm logic technology optimised for 1.8V operation. IEEE International Electron Devices Meeting (IEDM'96), 1996, pp. 847–850 5. Chen, Z., Diaz, C., Plummer, J. D., Cao, M. and Greene, W., 0.18μm dual Vt MOSFET-process and energy-delay measurement. IEEE International Electron Devices Meeting (IEDM'96), 1996, pp. 851–854
Cited by
87 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
|
|