Modified Ramped Current Stress Technique for Monitoring Thin Dielectrics Reliability and Charge Degradation-Reference-Cited by-同舟云学术

Modified Ramped Current Stress Technique for Monitoring Thin Dielectrics Reliability and Charge Degradation

Published:2022-02-10 Issue:9 Volume:219 Page:2100400
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Physica Status Solidi (a)

Author:

Andreev Dmitrii V.¹^ORCID,Maslovsky Vladimir M.²,Andreev Vladimir V.¹^ORCID,Stolyarov Alexander A.¹

Affiliation:

1. Bauman Moscow State Technical University The Kaluga branch, Bazhenov st. 2 248000 Kaluga Russia

2. Moscow Institute of Physics and Technology (National Research University) Institutskiy per. 9 141701 Dolgoprudnyi Moscow Region Russia

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.202100400

Reference28 articles.

1. Reliability Wearout Mechanisms in Advanced CMOS Technologies

2. Dielectric breakdown mechanisms in gate oxides

3. Facts and Myths of Dielectric Breakdown Processes—Part I: Statistics, Experimental, and Physical Acceleration Models

4. Generation of positive charge in silicon dioxide during avalanche and tunnel electron injection

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