Correlation of lifetimes from CVS and RVS using the 1/E-model for thermally grown oxides on polysilicon-Reference-Cited by-同舟云学术

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Correlation of lifetimes from CVS and RVS using the 1/E-model for thermally grown oxides on polysilicon

Published: Issue: Volume: Page:
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Container-title:Proceedings of 1994 IEEE International Integrated Reliability Workshop (IRWS)
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Author:

Martin A.,O'Sullivan P.,Mathewson A.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx2/3886/11312/00515836.pdf?arnumber=515836

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. An introduction to fast wafer level reliability monitoring for integrated circuit mass production;Microelectronics Reliability;2004-08

2. Ramped current stress for fast and reliable wafer level reliability monitoring of thin gate oxide reliability;Microelectronics Reliability;2003-08

3. Thin Oxide Breakdown Mechanism of Constant Voltage Stress on MOSFETs;Physica Scripta;2002

4. Dielectric Reliability Measurement Methods: A Review;Microelectronics Reliability;1998-02

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