High-temperature electron transport in metamorphic InGaAs/InAlAs heterostructures
Author:
Publisher
Informa UK Limited
Subject
General Materials Science
Link
http://www.tandfonline.com/doi/pdf/10.1016/j.stam.2005.02.024
Reference15 articles.
1. In0.5Ga0.5As/InAlAs Modulation-doped Field Effect Transistors on GaAs Substrates Grown by Low-Temperature Molecular Beam Epitaxy
2. High Gm In0.5Al0.5As/In0.5Ga0.5As high electron mobility transistors grown lattice-mismatched on GaAs substrates
3. Metamorphic InP/InGaAs double-heterojunction bipolar transistors on GaAs grown by molecular-beam epitaxy
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