Low-frequency noise in InAs films bonded on low-k flexible substrates
Author:
Affiliation:
1. Center for Nano Materials and Technology, Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan
Funder
Japan Society for the Promotion of Science (JSPS)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4935458
Reference42 articles.
1. Indium arsenide: a semiconductor for high speed and electro-optical devices
2. The family (InAs, GaSb, AlSb) and its heterostructures: a selective review
3. A review of energy bandgap engineering in III–V semiconductor alloys for mid-infrared laser applications
4. Antimonide-based compound semiconductors for electronic devices: A review
5. 30-nm InAs PHEMTs With $f_{T} = \hbox{644}\ \hbox{GHz}$ and $f_{\max} = \hbox{681}\ \hbox{GHz}$
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2. Electron mobility anisotropy in InAs/GaAs(001) heterostructures;Applied Physics Letters;2021-05-03
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