Low-frequency noise in AlTiO/AlGaN/GaN metal-insulator-semiconductor heterojunction field-effect transistors
Author:
Affiliation:
1. Center for Nano Materials and Technology, Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan
Funder
Japan Society for the Promotion of Science (JSPS)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4952386
Reference45 articles.
1. Suppression of current collapse in insulated gate AlGaN/GaN heterostructure field-effect transistors using ultrathin Al2O3 dielectric
2. Investigations of HfO2∕AlGaN∕GaN metal-oxide-semiconductor high electron mobility transistors
3. AlGaN/GaN MIS-HEMTs with HfO2 gate insulator
4. AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors with ZnO gate layer and (NH4)2Sx surface treatment
5. AlGaN-GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors With Very High- $k$ Oxynitride $\hbox{TaO}_{x} \hbox{N}_{y}$ Gate Dielectric
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1. AlGaN/GaN devices with metal–semiconductor or insulator–semiconductor interfacial layers: Vacuum level step due to dipole and interface fixed charge;Journal of Applied Physics;2024-02-28
2. Low-frequency noise in AlTiO/AlGaN/GaN metal-insulator-semiconductor field-effect transistors with non-gate-recessed or partially-gate-recessed structures;Semiconductor Science and Technology;2023-08-11
3. Thermally hardened AlGaN/GaN MIS-HEMTs based on multilayer dielectrics and silicon nitride passivation;Applied Physics Letters;2023-03-13
4. Status of Aluminum Oxide Gate Dielectric Technology for Insulated-Gate GaN-Based Devices;Materials;2022-01-21
5. Normally-off operations in partially-gate-recessed AlTiO/AlGaN/GaN field-effect transistors based on interface charge engineering;Journal of Applied Physics;2021-07-07
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